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| Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) For muting Features * Low collector-emitter saturation voltage VCE(sat) , optimum for the muting circuit * The use with high current value is possible Unit: mm 0.3+0.1 -0.0 3 0.15+0.10 -0.05 1.250.10 2.10.1 5 1 2 (0.65) (0.65) Marking symbol * UNR5225 FZ * UNR5226 FY * UNR5227 FW (R1) 10 k 4.7 k 6.8 k (R2) 6.8 k 1.30.1 2.00.2 10 0.90.1 0.9+0.2 -0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 5 600 150 150 -55 to +150 Unit V V V mA mW C C B R2 R1 Internal Connection C 0 to 0.1 Absolute Maximum Ratings Ta = 25C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package E Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio UNR5227 UNR5225/5226 VCE(sat) R1 IC = 50 mA, IB = 2.5 mA -30% 4.7 6.8 10 R1/R2 Ron VI = 7 V, RL = 1 k, f = 1 kHz 0.8 1.0 0.95 1.1 1.5 fT VCB = 10 V, IE = -50 mA, f = 200 MHz 200 MHz 1.2 Symbol VCBO VCEO VEBO ICBO IEBO hFE Conditions IC = 1 A, IE = 0 IC = 1 mA, IB = 0 IE = 1 A, IC = 0 VCB = 30 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 50 mA 70 100 600 80 +30% mV k Min 30 20 5 1 1 Typ Max Unit V V V A A Collector-emitter saturation voltage Input resistance UNR5226 UNR5227 UNR5225 Resistance ratio ON resistance * UNR5227 UNR5226 UNR5227 UNR5225 Transition frequency Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to Ron measurement circuit Publication date: January 2004 SJH00043BED 0.20.1 Resistance by Part Number 1 UNR5225/5226/5227 Electrical Characteristics (continued) Ta = 25C 3C * Ron measurement circuit RL R1 VI R2 VB VV VA f = 1 kHz V = 0.3 V Ron = VB x RL () VA-VB Common characteristics chart PT Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of UNR5225 IC VCE Collector-emitter saturation voltage VCE(sat) (mV) 400 Ta = 25C VCE(sat) IC 103 IC / IB = 10 hFE IC 250 VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) 300 IB = 1.0 mA 0.9 mA 0.8 mA 200 Ta = 75C 150 102 25C -25C 200 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA Ta = 75C 10 25C -25C 100 100 50 0 0 2.5 5.0 7.5 10.0 1 1 10 102 0 1 10 102 103 104 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 2 SJH00043BED UNR5225/5226/5227 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 14 f = 1 MHz IO VIN 102 VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C 10 Output current IO (mA) 10 Input voltage VIN (V) 10 1 10 -1 5 1 10 -2 1 1 10 100 10 -3 0.25 0.75 1.25 10 -1 10 -3 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5226 IC VCE Collector-emitter saturation voltage VCE(sat) (mV) 500 VCE = 10 V VCE(sat) IC 103 I / I = 10 C B hFE IC 500 VCE = 10 V 400 Forward current transfer ratio hFE 400 Ta = 75C 300 25C -25C 200 Collector current IC (mA) IB = 1.0 mA 0.9 mA 300 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 0 2.5 5.0 7.5 10.0 Ta = 75C 102 25C 200 -25C 10 100 100 1 1 10 102 103 0 1 10 102 103 104 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 14 f = 1 MHz IO VIN 102 VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C 10 Output current IO (mA) 10 Input voltage VIN (V) 10 1 10 -1 5 1 10 -2 1 1 10 102 10 -3 0.25 0.75 1.25 10 -1 10 -3 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00043BED 3 UNR5225/5226/5227 Characteristics charts of UNR5227 IC VCE Collector-emitter saturation voltage VCE(sat) (mV) 400 Ta = 25C 103 VCE(sat) IC IC / IB = 10 hFE IC 300 VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) 300 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 75C 200 25C -25C 100 200 0.7 mA 0.6 mA 0.5 mA 102 Ta = 75C 100 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 2 4 6 10 25C -25C 10 1 10 102 103 0 0 1 10 102 103 104 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 20 f = 1 MHz 102 IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 16 10 Output current IO (mA) Input voltage VIN (V) 10 12 1 8 10 -1 1 4 10 -2 0 1 10 102 10 -3 0.25 0.75 1.25 10 -1 10 -3 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJH00043BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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